Two‐band modeling of narrow band gap and interband tunneling devices

Narrow band gap InGaSb, InAlAsSb alloys for electronic devices

Solid source molecular beam epitaxy has been used to grow random alloy quaternary InAlAsSb and ternary InGaSb alloys with a 6.2 Å lattice constant for use in electronic devices such as p-n junctions and heterojunction bipolar transistors HBTs . Several p-n hetrojunctions composed of p-type InGaSb and one of several different n-type InAlAsSb alloys have been fabricated and show good rectificatio...

Full Band Atomistic Modeling of Homo-junction InGaAs Band-to-Band Tunneling Diodes Including Band Gap Narrowing

A homo-junction In0.53Ga0.47As tunneling diode is investigated using full-band, atomistic quantum transport approach based on a tight-binding model (TB) and the Non-equilibrium Green’s Function formalism. Band gap narrowing (BGN) is included in TB by altering its parameters using the Jain-Roulston model. BGN is found to be critical in the determination of the current peak and the second turn-on...

Band-gap tunneling states in DNA.

An important issue regarding DNA electrical conductivity is the electron (hole) transfer rate. Experiments have found that this transfer rate involves quantum mechanical tunneling for short distances and thermally activated hopping over large distances. The electron (or hole) tunneling probability through a molecule depends on the length of molecule L, as e(-beta(E)L), where the tunneling betaE...

Modeling of Tunneling Spectroscopy in High - T c Superconductors , Incorporating Band Structure , Gap Symmetry , Group Velocity , and Tunneling Directionality

A theoretical model for tunneling spectroscopy employing tight-binding band structure, dx2−y2 gap symmetry, group velocity, and tunneling directionality is studied. This is done to investigate if the model can exhibit the same wide range of characteristics observed in tunneling experiments on high-Tc superconductors. A band structure specific to optimallydoped Bi2Sr2CaCu2O8 (BSCCO) is used to c...

Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures